Semiconductor gas sensor

Over the past few years, semiconductors are very attractive materials that are commonly used to make electronic devices such as Bipolar Junction Transistor (BJT), Metal Oxide Semiconductor Field Effect Transistor and Complementary Metal Oxide Semiconductor Transistor (CMOS), which consist of N-MOSFE...

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Main Author: Fang, Peiyuan
Other Authors: K. Radhakrishnan
Format: Final Year Project
Language:English
Published: 2015
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Online Access:http://hdl.handle.net/10356/63607
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-636072023-07-07T16:10:51Z Semiconductor gas sensor Fang, Peiyuan K. Radhakrishnan School of Electrical and Electronic Engineering Temasek Laboratories @ NTU DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Over the past few years, semiconductors are very attractive materials that are commonly used to make electronic devices such as Bipolar Junction Transistor (BJT), Metal Oxide Semiconductor Field Effect Transistor and Complementary Metal Oxide Semiconductor Transistor (CMOS), which consist of N-MOSFET and P-MOSFET, etc. In this project, there are two parts, the first part consists of High Electron Mobility Transistor (HMET) structure, 2 DEG properties, Gallium Nitride properties and Molecular Beam Expitaxy (MBE) studies before proceeding to device development. Hall effect measurement and Atomic Force Microscopy (AFM) results will be analysed to have a better understanding on the electrical characterization. Using Hall effect measurements, it is shown that samples V234 and V648 exhibit reasonable mobility as compared to the other samples. Using Atomic Force Microscopy (AFM), it is shown that sample V234 offer better morphology and smooth surface. The second part consists of how the devices respond to the gases when they are exposed in a closed chamber. Because of the surface reaction, the device resistance level will either increase or decrease depending on gases that are inserted. Currently, the gases that were used for testing are Carbon dioxide (C02), Nitrogen oxide and Ammonia. During the experiment, we found that Gallium Nitride HEMT can be used as a gas sensor when operating at 150 oC. In this study, it is shown that with higher concentration of C02, there is more reaction on the surface and hence the resistance will decrease more as compared to lower concentration. To overcome this issue and functionalize the surface, we may need to use starch/ polyethylenimine on the device surface for C02 sensing with lower concentration. Bachelor of Engineering 2015-05-15T07:44:26Z 2015-05-15T07:44:26Z 2015 2015 Final Year Project (FYP) http://hdl.handle.net/10356/63607 en Nanyang Technological University 51 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Fang, Peiyuan
Semiconductor gas sensor
description Over the past few years, semiconductors are very attractive materials that are commonly used to make electronic devices such as Bipolar Junction Transistor (BJT), Metal Oxide Semiconductor Field Effect Transistor and Complementary Metal Oxide Semiconductor Transistor (CMOS), which consist of N-MOSFET and P-MOSFET, etc. In this project, there are two parts, the first part consists of High Electron Mobility Transistor (HMET) structure, 2 DEG properties, Gallium Nitride properties and Molecular Beam Expitaxy (MBE) studies before proceeding to device development. Hall effect measurement and Atomic Force Microscopy (AFM) results will be analysed to have a better understanding on the electrical characterization. Using Hall effect measurements, it is shown that samples V234 and V648 exhibit reasonable mobility as compared to the other samples. Using Atomic Force Microscopy (AFM), it is shown that sample V234 offer better morphology and smooth surface. The second part consists of how the devices respond to the gases when they are exposed in a closed chamber. Because of the surface reaction, the device resistance level will either increase or decrease depending on gases that are inserted. Currently, the gases that were used for testing are Carbon dioxide (C02), Nitrogen oxide and Ammonia. During the experiment, we found that Gallium Nitride HEMT can be used as a gas sensor when operating at 150 oC. In this study, it is shown that with higher concentration of C02, there is more reaction on the surface and hence the resistance will decrease more as compared to lower concentration. To overcome this issue and functionalize the surface, we may need to use starch/ polyethylenimine on the device surface for C02 sensing with lower concentration.
author2 K. Radhakrishnan
author_facet K. Radhakrishnan
Fang, Peiyuan
format Final Year Project
author Fang, Peiyuan
author_sort Fang, Peiyuan
title Semiconductor gas sensor
title_short Semiconductor gas sensor
title_full Semiconductor gas sensor
title_fullStr Semiconductor gas sensor
title_full_unstemmed Semiconductor gas sensor
title_sort semiconductor gas sensor
publishDate 2015
url http://hdl.handle.net/10356/63607
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