Fabrication and characterisation of room temperature detector

• Main Author: Agustino
• Other Authors: Fan Weijun
• Format: Final Year Project
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics; DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics; DRNTU::Engineering::Electrical and electronic engineering::Semiconductors; DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: http://hdl.handle.net/10356/64352
• Institution: Nanyang Technological University

Indium Arsenide Antimonide (InAsSb) has been widely considered a good candidate for the development of infrared photodetector at room temperature due to its various advantages compared with Mercury Cadmium Telluride (MCT) such as reduced Auger recombination rate, better stability over large area, hi...