Radiation hardened ICs

This final year project develops a new Radiation-Hardened-By-Design approach to detect Single Event Latchup (SEL) by monitoring the transient current slope, which is proven with reliable immunity to SEL. The object is to reduce the cost of Radiation-Hardened-By-Process technique by benefiting from t...

Full description

Saved in:
Bibliographic Details
Main Author: Ding, Xiangbin
Other Authors: Chang, Joseph Sylvester
Format: Final Year Project
Language:English
Published: 2015
Subjects:
Online Access:http://hdl.handle.net/10356/64405
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-64405
record_format dspace
spelling sg-ntu-dr.10356-644052023-07-07T17:38:42Z Radiation hardened ICs Ding, Xiangbin Chang, Joseph Sylvester School of Electrical and Electronic Engineering Temasek Laboratories @ NTU DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits This final year project develops a new Radiation-Hardened-By-Design approach to detect Single Event Latchup (SEL) by monitoring the transient current slope, which is proven with reliable immunity to SEL. The object is to reduce the cost of Radiation-Hardened-By-Process technique by benefiting from the low cost mass produced integrated circuits. A comprehensive literature review is conducted and it is found that the SEL current ramps up sharply with an increasing slope. This distinguishing characteristic is verified through both theoretical analysis and reasonable model simulations. The desired SEL detection and protection circuit is designed based on the verified current characteristic. Firstly, the SEL triggering current is converted into a corresponding voltage variation through the Current-to-Voltage converter stage. Secondly, the voltage is sampled and fed into the comparator stage. Thirdly, a high speed comparator stage with proper hysteresis is designed to detect the SEL occurrence and generate corresponding output logic. Lastly, the output logic modulation stage is designed to filter out noises and reshape the output logic. Overall, this project proposes a useful method of the SEL detection and protection design. Bachelor of Engineering 2015-05-26T06:58:18Z 2015-05-26T06:58:18Z 2015 2015 Final Year Project (FYP) http://hdl.handle.net/10356/64405 en Nanyang Technological University 60 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Ding, Xiangbin
Radiation hardened ICs
description This final year project develops a new Radiation-Hardened-By-Design approach to detect Single Event Latchup (SEL) by monitoring the transient current slope, which is proven with reliable immunity to SEL. The object is to reduce the cost of Radiation-Hardened-By-Process technique by benefiting from the low cost mass produced integrated circuits. A comprehensive literature review is conducted and it is found that the SEL current ramps up sharply with an increasing slope. This distinguishing characteristic is verified through both theoretical analysis and reasonable model simulations. The desired SEL detection and protection circuit is designed based on the verified current characteristic. Firstly, the SEL triggering current is converted into a corresponding voltage variation through the Current-to-Voltage converter stage. Secondly, the voltage is sampled and fed into the comparator stage. Thirdly, a high speed comparator stage with proper hysteresis is designed to detect the SEL occurrence and generate corresponding output logic. Lastly, the output logic modulation stage is designed to filter out noises and reshape the output logic. Overall, this project proposes a useful method of the SEL detection and protection design.
author2 Chang, Joseph Sylvester
author_facet Chang, Joseph Sylvester
Ding, Xiangbin
format Final Year Project
author Ding, Xiangbin
author_sort Ding, Xiangbin
title Radiation hardened ICs
title_short Radiation hardened ICs
title_full Radiation hardened ICs
title_fullStr Radiation hardened ICs
title_full_unstemmed Radiation hardened ICs
title_sort radiation hardened ics
publishDate 2015
url http://hdl.handle.net/10356/64405
_version_ 1772825874200002560