Resistive and breakdown study of two-terminal graphene-based memory devices

• Main Author: Fairus Sholihin Abu Bakar
• Other Authors: Tay Beng Kang
• Format: Final Year Project
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/64644
• Institution: Nanyang Technological University

Graphene is a newly discovered material that has a lot of potential for applications. Some of the studies that have been done on graphene describe how it can be used as memory device. Our device has a simple structure, made up of two electrodes connected by graphene. It is able to switch between two states (ON/OFF) based on the applied voltage. There are uncertainties with regards to what causes the breakdown (when the device switches to high resistance state – ON). Therefore in this project we tried to understand the switching behaviour of this graphene device. The approach was to have devices of different dimensions and analyse the electrical characteristics (R, I, V, etc.) before, during and after breakdown.