Interface and domain engineering for enhanced reliability in ferroelectric-based memory
In a ferroelectric random access memory (FeRAM), the two logic states, “1” and “0”, are represented by the spontaneous polarization directions in the ferroelectric material, which can be altered by an external electric field. FeRAM has many advantages, such as high speed and excellent data retention...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2016
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| Online Access: | https://hdl.handle.net/10356/65920 |
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| Institution: | Nanyang Technological University |
| Language: | English |