Interface and domain engineering for enhanced reliability in ferroelectric-based memory

• Main Author: Zhou, Yang
• Other Authors: Wang Junling
• Format: Theses and Dissertations
• Language: English
• Published: 2016
• Subjects: DRNTU::Engineering::Materials::Functional materials
• Online Access: https://hdl.handle.net/10356/65920
• Institution: Nanyang Technological University

In a ferroelectric random access memory (FeRAM), the two logic states, “1” and “0”, are represented by the spontaneous polarization directions in the ferroelectric material, which can be altered by an external electric field. FeRAM has many advantages, such as high speed and excellent data retention...