Tuning the barrier height at metal/NdNiO3/semiconductor interface
This report contains an overview of recent advances in condensed matter physics and specifically the phenomena of metal-insulator transition and some charge transport models. It outlines the basics of band theory of solids and the conditions where certain central assumptions to the band theory of...
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Format: | Final Year Project |
Language: | English |
Published: |
2016
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Subjects: | |
Online Access: | http://hdl.handle.net/10356/66346 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | This report contains an overview of recent advances in condensed matter physics and specifically
the phenomena of metal-insulator transition and some charge transport models. It outlines the
basics of band theory of solids and the conditions where certain central assumptions to the band
theory of solids no longer hold accurate. It also provides an introductory overview of the
characterization techniques that will be utilized in the experiment and a very brief overview of
the studies done on NdNiO3 (NNO) and other similar nickelates systems. Temperature dependent
I-V measurements were taken using a simple two-probe technique from 85K -300K. The
experimental findings strongly indicate that NNO follows a hopping based charge transport
mechanism. While the experiments in this project do not have a complete agreement on the
contributions from thermally activated charge transport mechanism, this could possibly be a
result of unintentional impurity contamination or incomplete ionization of niobium from the
strontium titanate. |
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