GaN based layer structures for sensor application
In recent years, research on Gallium nitride material is popular among the semiconductor researchers because of its superior physical properties compared to silicon and other semiconductors. GaN has high band gap, high breakdown field strength, high saturation velocity, high chemical and high radiat...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
2016
|
| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/68175 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|