A PVT-tolerant relaxation oscillator in 65nm CMOS

One of the major problems with integrated oscillators is that of stability against the process, supply and temperature variations. The proposed circuit architecture presents a fully-integrated CMOS relaxation oscillator (ROSC) using a process-voltage-temperature (PVT) insensitive current reference g...

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Main Author: Cimbili Bharath Kumar
Other Authors: Chan Pak Kwong
Format: Theses and Dissertations
Language:English
Published: 2017
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Online Access:http://hdl.handle.net/10356/69500
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-695002023-07-04T15:03:23Z A PVT-tolerant relaxation oscillator in 65nm CMOS Cimbili Bharath Kumar Chan Pak Kwong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering One of the major problems with integrated oscillators is that of stability against the process, supply and temperature variations. The proposed circuit architecture presents a fully-integrated CMOS relaxation oscillator (ROSC) using a process-voltage-temperature (PVT) insensitive current reference generator. The oscillator circuit is based on a conventional ROSC architecture which includes a PVT insensitive current and a voltage reference circuit, two comparators, two capacitors and an output logic circuit which consists of a SR latch and a frequency divider. The oscillator is designed to generate a clock frequency of 64.4kHz in 65nm CMOS technology. The Monte-Carlo simulation results have shown that the ROSC is able to achieve 3.66% in the process sensitivity (σ/μ). The output frequency variation is 1.71% over the temperature range from ‒20oC to 100oC and 0.73% over the supply variation from 1.2V to 2V. The power consumption of ROSC is 4.32μW at 1.2V supply. It has displayed better figure-of merit (FOM) against PVT variations with respect to other reported prior-art works. Master of Science (Electronics) 2017-02-01T01:09:54Z 2017-02-01T01:09:54Z 2017 Thesis http://hdl.handle.net/10356/69500 en 53 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Cimbili Bharath Kumar
A PVT-tolerant relaxation oscillator in 65nm CMOS
description One of the major problems with integrated oscillators is that of stability against the process, supply and temperature variations. The proposed circuit architecture presents a fully-integrated CMOS relaxation oscillator (ROSC) using a process-voltage-temperature (PVT) insensitive current reference generator. The oscillator circuit is based on a conventional ROSC architecture which includes a PVT insensitive current and a voltage reference circuit, two comparators, two capacitors and an output logic circuit which consists of a SR latch and a frequency divider. The oscillator is designed to generate a clock frequency of 64.4kHz in 65nm CMOS technology. The Monte-Carlo simulation results have shown that the ROSC is able to achieve 3.66% in the process sensitivity (σ/μ). The output frequency variation is 1.71% over the temperature range from ‒20oC to 100oC and 0.73% over the supply variation from 1.2V to 2V. The power consumption of ROSC is 4.32μW at 1.2V supply. It has displayed better figure-of merit (FOM) against PVT variations with respect to other reported prior-art works.
author2 Chan Pak Kwong
author_facet Chan Pak Kwong
Cimbili Bharath Kumar
format Theses and Dissertations
author Cimbili Bharath Kumar
author_sort Cimbili Bharath Kumar
title A PVT-tolerant relaxation oscillator in 65nm CMOS
title_short A PVT-tolerant relaxation oscillator in 65nm CMOS
title_full A PVT-tolerant relaxation oscillator in 65nm CMOS
title_fullStr A PVT-tolerant relaxation oscillator in 65nm CMOS
title_full_unstemmed A PVT-tolerant relaxation oscillator in 65nm CMOS
title_sort pvt-tolerant relaxation oscillator in 65nm cmos
publishDate 2017
url http://hdl.handle.net/10356/69500
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