The effects of silicon doping on the structural and electrical properties of III-nitrides grown by MBE

• Main Author: Chakraborti Sudipta
• Other Authors: K Radhakrishnan
• Format: Theses and Dissertations
• Language: English
• Published: 2017
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/69510
• Institution: Nanyang Technological University

Group III-nitrides such as GaN, AlN and AlGaN alloys are gaining a lot of interest in the field of optoelectronics due to their ability to emit light from the infrared (Eg, InN =0.7 eV) to the deep ultra-violet (Eg,AlN = 6.2 eV) region of the spectrum. AlN and GaN are the most preferred materials...