Characterization of InP based high electron mobility transistor structures grown by solid source MBE
This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optical, and structural characterisations of this material system are reported and discussed in detail.
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/3115 |
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| Institution: | Nanyang Technological University |