Characterization of InP based high electron mobility transistor structures grown by solid source MBE

• المؤلف الرئيسي: Too, Patrick Heng Kwee.
• مؤلفون آخرون: Radhakrishnan, K.
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/3115
• المؤسسة: Nanyang Technological University

This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optical, and structural characterisations of this material system are reported and discussed in detail.