Characterization of InP based high electron mobility transistor structures grown by solid source MBE

This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optical, and structural characterisations of this material system are reported and discussed in detail.

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Bibliographic Details
Main Author:	Too, Patrick Heng Kwee.
Other Authors:	Radhakrishnan, K.
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:	http://hdl.handle.net/10356/3115
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3115
record_format	dspace
spelling	sg-ntu-dr.10356-31152023-07-04T15:42:50Z Characterization of InP based high electron mobility transistor structures grown by solid source MBE Too, Patrick Heng Kwee. Radhakrishnan, K. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optical, and structural characterisations of this material system are reported and discussed in detail. Master of Engineering 2008-09-17T09:22:35Z 2008-09-17T09:22:35Z 2000 2000 Thesis http://hdl.handle.net/10356/3115 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Too, Patrick Heng Kwee. Characterization of InP based high electron mobility transistor structures grown by solid source MBE
description	This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optical, and structural characterisations of this material system are reported and discussed in detail.
author2	Radhakrishnan, K.
author_facet	Radhakrishnan, K. Too, Patrick Heng Kwee.
format	Theses and Dissertations
author	Too, Patrick Heng Kwee.
author_sort	Too, Patrick Heng Kwee.
title	Characterization of InP based high electron mobility transistor structures grown by solid source MBE
title_short	Characterization of InP based high electron mobility transistor structures grown by solid source MBE
title_full	Characterization of InP based high electron mobility transistor structures grown by solid source MBE
title_fullStr	Characterization of InP based high electron mobility transistor structures grown by solid source MBE
title_full_unstemmed	Characterization of InP based high electron mobility transistor structures grown by solid source MBE
title_sort	characterization of inp based high electron mobility transistor structures grown by solid source mbe
publishDate	2008
url	http://hdl.handle.net/10356/3115
_version_	1772826709672853504

Characterization of InP based high electron mobility transistor structures grown by solid source MBE

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