Design evaluation of microelectronics devices using focused ion beam technology

With the advent of new technology, the circuitry lines within the IC chip are getting more and more higher in density. Miniaturisation of IC chips has forced many IC manufacturers to go to and beyond deep-sub-micron technology. The present IC technology still stands at less than 0.35 micron. But in...

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Main Author: Yeo, Swee Hock.
Other Authors: School of Mechanical and Aerospace Engineering
Format: Research Report
Published: 2008
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Online Access:http://hdl.handle.net/10356/7001
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-70012023-03-04T18:07:40Z Design evaluation of microelectronics devices using focused ion beam technology Yeo, Swee Hock. School of Mechanical and Aerospace Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics With the advent of new technology, the circuitry lines within the IC chip are getting more and more higher in density. Miniaturisation of IC chips has forced many IC manufacturers to go to and beyond deep-sub-micron technology. The present IC technology still stands at less than 0.35 micron. But in 2003 or in 2004, the technology will move towards less than 0.1 micron. In fact, some technologically advanced countries like USA are already working on less than 0.13 micron technology. In anticipation, many of the IC manufacturers are preparing for this imminent change that will inevitably take place in the near future. To be able to achieve the above, critical tools (e.g. focus-ion beam) and the relevant expertise and competencies have to be developed. In short, local technology support must be put in place. This is timely as we move forward to 2004, semiconductor industry will be a major pillar in Singapore's technological and industrial base. 2008-09-18T05:58:47Z 2008-09-18T05:58:47Z 2005 2005 Research Report http://hdl.handle.net/10356/7001 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Yeo, Swee Hock.
Design evaluation of microelectronics devices using focused ion beam technology
description With the advent of new technology, the circuitry lines within the IC chip are getting more and more higher in density. Miniaturisation of IC chips has forced many IC manufacturers to go to and beyond deep-sub-micron technology. The present IC technology still stands at less than 0.35 micron. But in 2003 or in 2004, the technology will move towards less than 0.1 micron. In fact, some technologically advanced countries like USA are already working on less than 0.13 micron technology. In anticipation, many of the IC manufacturers are preparing for this imminent change that will inevitably take place in the near future. To be able to achieve the above, critical tools (e.g. focus-ion beam) and the relevant expertise and competencies have to be developed. In short, local technology support must be put in place. This is timely as we move forward to 2004, semiconductor industry will be a major pillar in Singapore's technological and industrial base.
author2 School of Mechanical and Aerospace Engineering
author_facet School of Mechanical and Aerospace Engineering
Yeo, Swee Hock.
format Research Report
author Yeo, Swee Hock.
author_sort Yeo, Swee Hock.
title Design evaluation of microelectronics devices using focused ion beam technology
title_short Design evaluation of microelectronics devices using focused ion beam technology
title_full Design evaluation of microelectronics devices using focused ion beam technology
title_fullStr Design evaluation of microelectronics devices using focused ion beam technology
title_full_unstemmed Design evaluation of microelectronics devices using focused ion beam technology
title_sort design evaluation of microelectronics devices using focused ion beam technology
publishDate 2008
url http://hdl.handle.net/10356/7001
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