III-V/silicon laser

• Main Author: Fu, Xin
• Other Authors: Wang Qijie
• Format: Final Year Project
• Language: English
• Published: 2017
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/72227
• Institution: Nanyang Technological University

The optical properties of silicon materials have been recognized in recently years, and their application in optoelectronics have attracted more and more attention. On the one hand, the silicon material has a variety of excellent nonlinear optical properties, on the other hand, the silicon devices have a very mature manufacturing process. Both the advantages make silicon be the potential alternative of the traditional optical materials. The electronic devices (such as COMS, diodes, transistors and etc.) and the optical devices (such as lasers, detectors, optical switches, optical modulators, optical circuits and etc.) can be integrated in one silicon ship to constitute optoelectronic integrated devices. They can be applied to optical communication, bio-sensing, military science, optical instrumentations, space aircrafts, optical interconnection, optical computing and artificial intelligence system. This paper focused on the mode-locked III-V/silicon laser and first studied the important concepts and development of laser. Then it carried the topic deep down to understanding the modeling of laser. After understanding the basic concepts, experiments were carried out for III-V/silicon with using different injection current source and optical source.