Structural and electrical characterization of GaN based HEMT heterostructures on SiC

• Main Author: Protik Parvez Sheikh
• Other Authors: K Radhakrishnan
• Format: Theses and Dissertations
• Language: English
• Published: 2017
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/72586
• Institution: Nanyang Technological University

Group III-nitride semiconductors and its alloys has been the subject of intense research because of its wide range of applications in the field of microelectronics and optoelectronics. They are used in light emitting diodes, lasers, detectors, next generation wireless network base stations, satel...