Engineered substrate for electronics and photonics applications
The last decade saw a major shift in semiconductor industry constantly thriving for low power and high performance. We have reached to 10nm node which was never imagined a decade ago. The effect of scaling on performance is not significant at lower nodes compared to the cost/transistor. This call...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2017
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/72589 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | The last decade saw a major shift in semiconductor industry constantly thriving
for low power and high performance. We have reached to 10nm node which
was never imagined a decade ago. The effect of scaling on performance is not
significant at lower nodes compared to the cost/transistor. This calls for other
candidates like Ge/Si (Germanium on Silicon) replacing standard silicon. This
thesis studies and compiles results on epitaxial growth of germanium on silicon,
characterization of interface strain/stress, roughness and threshold dislocation
density (TDD) which quantify the growth quality of Ge. Characterization techniques
include RAMAN, XRD, AFM are performed on the Ge/Si substrate and
reported. |
|---|