Engineered substrate for electronics and photonics applications

• Main Author: Tavva Yaswanth
• Other Authors: Tan Chuan Seng
• Format: Theses and Dissertations
• Language: English
• Published: 2017
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/72589
• Institution: Nanyang Technological University

The last decade saw a major shift in semiconductor industry constantly thriving for low power and high performance. We have reached to 10nm node which was never imagined a decade ago. The effect of scaling on performance is not significant at lower nodes compared to the cost/transistor. This calls for other candidates like Ge/Si (Germanium on Silicon) replacing standard silicon. This thesis studies and compiles results on epitaxial growth of germanium on silicon, characterization of interface strain/stress, roughness and threshold dislocation density (TDD) which quantify the growth quality of Ge. Characterization techniques include RAMAN, XRD, AFM are performed on the Ge/Si substrate and reported.