Design of magnetic shielding structure for STT-MRAM with perpendicular magnetic anisotropy by 3D simulation

• Main Author: Pattabiraman Lakshmipathi Subash
• Other Authors: Zhou Xing
• Format: Theses and Dissertations
• Language: English
• Published: 2018
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/73106
• Institution: Nanyang Technological University

Magnetic Random Access Memory (MRAM) is a promising universal memory for the future due to its high-speed operation, cost effectiveness, ability to scale down in size and low power consumption. However, despite its promise, the external magnetic field can severely impact the operation of MRAM. The d...