Power efficient SOC design techniques for advanced Finfet process technology

The Semiconductor industry has excelled the electronics market in providing high speed, power efficient, smart and reliable electronic devices. Transistors are made more and more powerful, with the advent of various process technology nodes and methods, which has led to the invention of high speed,...

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Main Author: Sigundey Janani Sainath
Other Authors: Gwee Bah Hwee
Format: Theses and Dissertations
Language:English
Published: 2018
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Online Access:http://hdl.handle.net/10356/73141
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-731412023-07-04T16:31:15Z Power efficient SOC design techniques for advanced Finfet process technology Sigundey Janani Sainath Gwee Bah Hwee School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The Semiconductor industry has excelled the electronics market in providing high speed, power efficient, smart and reliable electronic devices. Transistors are made more and more powerful, with the advent of various process technology nodes and methods, which has led to the invention of high speed, single/multi-core microprocessors, Application Specific Integrated Circuits, Field Programmable Gate Array and Memory chips. One such powerful and efficient process technology is the Fin Field Effect Transistor (FinFET) technology. This technology features with high performance, low leakage, less area and minimum supply voltage and it helps to integrate more and more functionality on a single IC (Integrated Circuit) chip. The properties of FinFETs will be presented in this dissertation; a comparison is made between the planar MOSFETs and FinFET devices. FinFET device sizing methodology is explained with experimental results. Stacked designs were not considered among the planar MOSFETs due to the ill effects of stack or body effect. However stacked designs are advantageous among the FinFET devices due to its unique geometrical structure and it is proven by experiments in this research study. The proposed stacked design style is simulated and compared with a conventional non-stacked design, and obtained an average power reduction of 57% and area reduction by 37%, using an industrial 7nm FinFET technology library. Nevertheless, this design style incurs a delay trade-off of 42%. These research findings were submitted to “International Symposium on Integrated Circuits IEEEISIC 2016 Conference”, Singapore. The research paper was accepted and presented in the Conference, and is included in the Conference Proceedings and IEEE Xplore. This research paper is also included in this dissertation. Master of Science (Integrated Circuit Design) 2018-01-03T07:39:39Z 2018-01-03T07:39:39Z 2018 Thesis http://hdl.handle.net/10356/73141 en 72 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Sigundey Janani Sainath
Power efficient SOC design techniques for advanced Finfet process technology
description The Semiconductor industry has excelled the electronics market in providing high speed, power efficient, smart and reliable electronic devices. Transistors are made more and more powerful, with the advent of various process technology nodes and methods, which has led to the invention of high speed, single/multi-core microprocessors, Application Specific Integrated Circuits, Field Programmable Gate Array and Memory chips. One such powerful and efficient process technology is the Fin Field Effect Transistor (FinFET) technology. This technology features with high performance, low leakage, less area and minimum supply voltage and it helps to integrate more and more functionality on a single IC (Integrated Circuit) chip. The properties of FinFETs will be presented in this dissertation; a comparison is made between the planar MOSFETs and FinFET devices. FinFET device sizing methodology is explained with experimental results. Stacked designs were not considered among the planar MOSFETs due to the ill effects of stack or body effect. However stacked designs are advantageous among the FinFET devices due to its unique geometrical structure and it is proven by experiments in this research study. The proposed stacked design style is simulated and compared with a conventional non-stacked design, and obtained an average power reduction of 57% and area reduction by 37%, using an industrial 7nm FinFET technology library. Nevertheless, this design style incurs a delay trade-off of 42%. These research findings were submitted to “International Symposium on Integrated Circuits IEEEISIC 2016 Conference”, Singapore. The research paper was accepted and presented in the Conference, and is included in the Conference Proceedings and IEEE Xplore. This research paper is also included in this dissertation.
author2 Gwee Bah Hwee
author_facet Gwee Bah Hwee
Sigundey Janani Sainath
format Theses and Dissertations
author Sigundey Janani Sainath
author_sort Sigundey Janani Sainath
title Power efficient SOC design techniques for advanced Finfet process technology
title_short Power efficient SOC design techniques for advanced Finfet process technology
title_full Power efficient SOC design techniques for advanced Finfet process technology
title_fullStr Power efficient SOC design techniques for advanced Finfet process technology
title_full_unstemmed Power efficient SOC design techniques for advanced Finfet process technology
title_sort power efficient soc design techniques for advanced finfet process technology
publishDate 2018
url http://hdl.handle.net/10356/73141
_version_ 1772825645077757952