Characterization of novel semiconductor lasers
Lasers have become an integral part of our life and technology with Quantum Cascade Laser (QCL), a developing technology with great potential for various applications. Within QCL, there are mid-infrared QCL and Terahertz, THz QCL, each with their own function and design considerations. The projec...
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sg-ntu-dr.10356-747442023-07-07T16:29:28Z Characterization of novel semiconductor lasers Neo, Ting Heng Wang Qijie School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics DRNTU::Engineering::Materials::Material testing and characterization Lasers have become an integral part of our life and technology with Quantum Cascade Laser (QCL), a developing technology with great potential for various applications. Within QCL, there are mid-infrared QCL and Terahertz, THz QCL, each with their own function and design considerations. The project covers the analysis and comparison of the QCL devices through literature review and characterization experiment. From research, QCL design considerations is known while differences between mid-infrared QCL and THz QCL is noted such as having different waveguides. This is followed by characterization of electrical and optical properties of the laser. A working sample was found to be operable under cryogenic cooling at 80K in the mid-infrared regime at about 10 µm with output power in the milliwatt range. Comparison with data from other researchers on THz shows similarities between the two devices in terms of output characterization. Primary difference between both device types lay mainly in operation wavelength and waveguide material used. The results combined with knowledge from the literature review serves to set a direction for improvement in QCL technology. Bachelor of Engineering 2018-05-23T07:54:16Z 2018-05-23T07:54:16Z 2018 Final Year Project (FYP) http://hdl.handle.net/10356/74744 en Nanyang Technological University 57 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics DRNTU::Engineering::Materials::Material testing and characterization Neo, Ting Heng Characterization of novel semiconductor lasers |
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Lasers have become an integral part of our life and technology with Quantum Cascade
Laser (QCL), a developing technology with great potential for various applications.
Within QCL, there are mid-infrared QCL and Terahertz, THz QCL, each with their own
function and design considerations. The project covers the analysis and comparison of
the QCL devices through literature review and characterization experiment. From
research, QCL design considerations is known while differences between mid-infrared
QCL and THz QCL is noted such as having different waveguides. This is followed by
characterization of electrical and optical properties of the laser. A working sample was
found to be operable under cryogenic cooling at 80K in the mid-infrared regime at about
10 µm with output power in the milliwatt range. Comparison with data from other
researchers on THz shows similarities between the two devices in terms of output
characterization. Primary difference between both device types lay mainly in operation
wavelength and waveguide material used. The results combined with knowledge from
the literature review serves to set a direction for improvement in QCL technology. |
author2 |
Wang Qijie |
author_facet |
Wang Qijie Neo, Ting Heng |
format |
Final Year Project |
author |
Neo, Ting Heng |
author_sort |
Neo, Ting Heng |
title |
Characterization of novel semiconductor lasers |
title_short |
Characterization of novel semiconductor lasers |
title_full |
Characterization of novel semiconductor lasers |
title_fullStr |
Characterization of novel semiconductor lasers |
title_full_unstemmed |
Characterization of novel semiconductor lasers |
title_sort |
characterization of novel semiconductor lasers |
publishDate |
2018 |
url |
http://hdl.handle.net/10356/74744 |
_version_ |
1772827609033342976 |