Characterization of novel semiconductor lasers

Lasers have become an integral part of our life and technology with Quantum Cascade Laser (QCL), a developing technology with great potential for various applications. Within QCL, there are mid-infrared QCL and Terahertz, THz QCL, each with their own function and design considerations. The projec...

Full description

Saved in:
Bibliographic Details
Main Author: Neo, Ting Heng
Other Authors: Wang Qijie
Format: Final Year Project
Language:English
Published: 2018
Subjects:
Online Access:http://hdl.handle.net/10356/74744
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-74744
record_format dspace
spelling sg-ntu-dr.10356-747442023-07-07T16:29:28Z Characterization of novel semiconductor lasers Neo, Ting Heng Wang Qijie School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics DRNTU::Engineering::Materials::Material testing and characterization Lasers have become an integral part of our life and technology with Quantum Cascade Laser (QCL), a developing technology with great potential for various applications. Within QCL, there are mid-infrared QCL and Terahertz, THz QCL, each with their own function and design considerations. The project covers the analysis and comparison of the QCL devices through literature review and characterization experiment. From research, QCL design considerations is known while differences between mid-infrared QCL and THz QCL is noted such as having different waveguides. This is followed by characterization of electrical and optical properties of the laser. A working sample was found to be operable under cryogenic cooling at 80K in the mid-infrared regime at about 10 µm with output power in the milliwatt range. Comparison with data from other researchers on THz shows similarities between the two devices in terms of output characterization. Primary difference between both device types lay mainly in operation wavelength and waveguide material used. The results combined with knowledge from the literature review serves to set a direction for improvement in QCL technology. Bachelor of Engineering 2018-05-23T07:54:16Z 2018-05-23T07:54:16Z 2018 Final Year Project (FYP) http://hdl.handle.net/10356/74744 en Nanyang Technological University 57 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
DRNTU::Engineering::Materials::Material testing and characterization
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
DRNTU::Engineering::Materials::Material testing and characterization
Neo, Ting Heng
Characterization of novel semiconductor lasers
description Lasers have become an integral part of our life and technology with Quantum Cascade Laser (QCL), a developing technology with great potential for various applications. Within QCL, there are mid-infrared QCL and Terahertz, THz QCL, each with their own function and design considerations. The project covers the analysis and comparison of the QCL devices through literature review and characterization experiment. From research, QCL design considerations is known while differences between mid-infrared QCL and THz QCL is noted such as having different waveguides. This is followed by characterization of electrical and optical properties of the laser. A working sample was found to be operable under cryogenic cooling at 80K in the mid-infrared regime at about 10 µm with output power in the milliwatt range. Comparison with data from other researchers on THz shows similarities between the two devices in terms of output characterization. Primary difference between both device types lay mainly in operation wavelength and waveguide material used. The results combined with knowledge from the literature review serves to set a direction for improvement in QCL technology.
author2 Wang Qijie
author_facet Wang Qijie
Neo, Ting Heng
format Final Year Project
author Neo, Ting Heng
author_sort Neo, Ting Heng
title Characterization of novel semiconductor lasers
title_short Characterization of novel semiconductor lasers
title_full Characterization of novel semiconductor lasers
title_fullStr Characterization of novel semiconductor lasers
title_full_unstemmed Characterization of novel semiconductor lasers
title_sort characterization of novel semiconductor lasers
publishDate 2018
url http://hdl.handle.net/10356/74744
_version_ 1772827609033342976