Thermal characterisation and analysis of GaN power devices
The main objective of this final year project is to do thermal analysis of the high-voltage AlGaN/GaN high-electron-mobility transistors (HEMTs) on Silicon (Si), Silicon Carbide (SiC) and CVD-Diamond (Dia) substrate. The measurements in this project were all done on fabricated 0.25 µm gate CPW GaN H...
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Final Year Project |
Language: | English |
Published: |
2018
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/76291 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Be the first to leave a comment!