Thermal characterisation and analysis of GaN power devices

• Main Author: Wirna
• Other Authors: Ng Geok Ing
• Format: Final Year Project
• Language: English
• Published: 2018
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/76291
• Institution: Nanyang Technological University

The main objective of this final year project is to do thermal analysis of the high-voltage AlGaN/GaN high-electron-mobility transistors (HEMTs) on Silicon (Si), Silicon Carbide (SiC) and CVD-Diamond (Dia) substrate. The measurements in this project were all done on fabricated 0.25 µm gate CPW GaN H...