Development of GaN-based high power density three-phase inverter
With the development of semiconductor technology, wide band gap semiconductor materials show more advantages than traditional semiconductor materials in many aspects, especially in high voltage and high frequency condition. In this project, GaN semiconductor material is used to make a three-phase in...
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| Format: | Thesis-Master by Coursework |
| Language: | English |
| Published: |
Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/150681 |
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| Institution: | Nanyang Technological University |
| Language: | English |