Development of GaN-based high power density three-phase inverter
With the development of semiconductor technology, wide band gap semiconductor materials show more advantages than traditional semiconductor materials in many aspects, especially in high voltage and high frequency condition. In this project, GaN semiconductor material is used to make a three-phase in...
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| Format: | Thesis-Master by Coursework |
| Language: | English |
| Published: |
Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/150681 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | With the development of semiconductor technology, wide band gap semiconductor materials show more advantages than traditional semiconductor materials in many aspects, especially in high voltage and high frequency condition. In this project, GaN semiconductor material is used to make a three-phase inverter and FOC technology is used to control motor rotation. The superior properties of GaN compared to Si and SiC are elaborated and the principle of FOC control is also explained. A model is established and simulated with MATLAB. Apart from it, the paper elaborates the hardware and software design of the power system, including PCB board design, microcontroller and device selection. At the end of the paper, the GaN inverter is evaluated by testing the circuit. |
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