Development of GaN-based high power density three-phase inverter

With the development of semiconductor technology, wide band gap semiconductor materials show more advantages than traditional semiconductor materials in many aspects, especially in high voltage and high frequency condition. In this project, GaN semiconductor material is used to make a three-phase in...

Full description

Saved in:
Bibliographic Details
Main Author: Wang, Ran
Other Authors: Josep Pou
Format: Thesis-Master by Coursework
Language:English
Published: Nanyang Technological University 2021
Subjects:
Online Access:https://hdl.handle.net/10356/150681
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Be the first to leave a comment!
You must be logged in first