Studies of GaN-based diode characteristics

Gallium Nitride (GaN) based diodes are very attractive for high-frequency, high-power and sensing applications due to their inherent material properties such as wide band gap with high breakdown voltage and higher saturation velocity. Hence, these diodes are very promising for the important basic bu...

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Bibliographic Details
Main Author: Jong, Justin Zhi Liang
Other Authors: Ng Geok Ing
Format: Final Year Project
Language:English
Published: 2019
Subjects:
Online Access:http://hdl.handle.net/10356/77592
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Institution: Nanyang Technological University
Language: English
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