Improvement of micro-strip GaN-on-SiC backside via-holes process

• Main Author: Yu, Zhuoran
• Other Authors: Wang Hong
• Format: Theses and Dissertations
• Language: English
• Published: 2019
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/78797
• Institution: Nanyang Technological University

When people think of power electronics applications for wide-bandgap semiconductor materials, they often consider silicon carbide or gallium nitride. This is not surprising, as silicon carbide and gallium nitride are the wideband gap semiconductors used in the world's most advanced power ele...