Development of micro-strip GaN-on-SiC backside via holes process
GaN-on-SiC HEMTs have gained remarkable attention due to their potential to revolutionize power and RF electronics as it has highest output power density amongst all solid state semiconductor devices Although much progress in HEMTs has been made, via-holes remain critical routes to improve DC and RF...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2018
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| Online Access: | http://hdl.handle.net/10356/74697 |
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| Institution: | Nanyang Technological University |
| Language: | English |