Hybrid-mode SRAM sense amplifiers : new approach on transistor sizing

• المؤلفون الرئيسيون: Do, Anh Tuan, Kong, Zhi Hui, Yeo, Kiat Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/79962; http://hdl.handle.net/10220/6260
• المؤسسة: Nanyang Technological University

A novel high-speed sense amplifier for ultra-low-voltage SRAM applications is presented. It introduces a completely different way of sizing the aspect ratio of the transistors on the data-path, hence realizing a current-voltage hybrid mode Sense Amplifier. Extensive post-layout simulations have prov...