Equivalent circuit model of on-wafer CMOS interconnects for RFICs

This paper investigates the properties of the on-wafer interconnects built in a 0.18-µm CMOStechnology for RF applications. A scalable equivalent circuit model is developed. The model parameters are extracted directly from the on-wafer measurements and formulated into empirical expressions. The e...

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Main Authors:	Shi, Xiaomeng, Ma, Jianguo, Yeo, Kiat Seng, Do, Manh Anh, Li, Erping
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2009
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/79963 http://hdl.handle.net/10220/5983
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-79963
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spelling	sg-ntu-dr.10356-799632020-03-07T13:57:22Z Equivalent circuit model of on-wafer CMOS interconnects for RFICs Shi, Xiaomeng Ma, Jianguo Yeo, Kiat Seng Do, Manh Anh Li, Erping School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper investigates the properties of the on-wafer interconnects built in a 0.18-µm CMOStechnology for RF applications. A scalable equivalent circuit model is developed. The model parameters are extracted directly from the on-wafer measurements and formulated into empirical expressions. The expressions are in functions of the length and the width of the interconnects. The proposed model can be easily implemented into commercial RF circuit simulators. It provides a novel solution to include the frequency-variant characteristics into a circuit simulation. The silicon-verified accuracy is proved to be up to 25 GHz with an average error less than 2%. Additionally, equivalent circuit model for longer wires can be obtained by cascading smaller subsections together. The scalability of the propose model is demonstrated. Published version 2009-07-31T07:22:24Z 2019-12-06T13:37:41Z 2009-07-31T07:22:24Z 2019-12-06T13:37:41Z 2005 2005 Journal Article Shi, X., Ma, J. G., Yeo, K. S., Do, M. A., & Li, E. (2005). Equivalent circuit model of on-wafer CMOS interconnects for RFICs. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 13(9), 1060-1071. 1063-8210 https://hdl.handle.net/10356/79963 http://hdl.handle.net/10220/5983 10.1109/TVLSI.2005.857177 en IEEE transactions on very large scale integration (VLSI) systems IEEE Transactions on Very Large Scale Integration (VLSI) Systems © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 12 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Shi, Xiaomeng Ma, Jianguo Yeo, Kiat Seng Do, Manh Anh Li, Erping Equivalent circuit model of on-wafer CMOS interconnects for RFICs
description	This paper investigates the properties of the on-wafer interconnects built in a 0.18-µm CMOStechnology for RF applications. A scalable equivalent circuit model is developed. The model parameters are extracted directly from the on-wafer measurements and formulated into empirical expressions. The expressions are in functions of the length and the width of the interconnects. The proposed model can be easily implemented into commercial RF circuit simulators. It provides a novel solution to include the frequency-variant characteristics into a circuit simulation. The silicon-verified accuracy is proved to be up to 25 GHz with an average error less than 2%. Additionally, equivalent circuit model for longer wires can be obtained by cascading smaller subsections together. The scalability of the propose model is demonstrated.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Shi, Xiaomeng Ma, Jianguo Yeo, Kiat Seng Do, Manh Anh Li, Erping
format	Article
author	Shi, Xiaomeng Ma, Jianguo Yeo, Kiat Seng Do, Manh Anh Li, Erping
author_sort	Shi, Xiaomeng
title	Equivalent circuit model of on-wafer CMOS interconnects for RFICs
title_short	Equivalent circuit model of on-wafer CMOS interconnects for RFICs
title_full	Equivalent circuit model of on-wafer CMOS interconnects for RFICs
title_fullStr	Equivalent circuit model of on-wafer CMOS interconnects for RFICs
title_full_unstemmed	Equivalent circuit model of on-wafer CMOS interconnects for RFICs
title_sort	equivalent circuit model of on-wafer cmos interconnects for rfics
publishDate	2009
url	https://hdl.handle.net/10356/79963 http://hdl.handle.net/10220/5983
_version_	1681039466703093760

Equivalent circuit model of on-wafer CMOS interconnects for RFICs

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