Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata

The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].

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Main Authors:	Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2013
Online Access:	https://hdl.handle.net/10356/80001 http://hdl.handle.net/10220/13359
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-80001
record_format	dspace
spelling	sg-ntu-dr.10356-800012020-03-07T13:57:23Z Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)]. Published version 2013-09-06T03:05:12Z 2019-12-06T13:38:31Z 2013-09-06T03:05:12Z 2019-12-06T13:38:31Z 2013 2013 Journal Article Zhang, Z.-H., Tan, S. T., Liu, W., Ju, Z., Zheng, K., Kyaw, Z., et al. (2013). Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata. Optics express, 21(15), 17670. 1094-4087 https://hdl.handle.net/10356/80001 http://hdl.handle.net/10220/13359 10.1364/OE.21.017670 en Optics express © 2013 OSA. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of OSA. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OE.21.017670]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
description	The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan
format	Article
author	Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan
spellingShingle	Zhang, Zi-Hui Tan, Swee Tiam Liu, Wei Ju, Zhengang Zheng, Ke Kyaw, Zabu Ji, Yun Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
author_sort	Zhang, Zi-Hui
title	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
title_short	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
title_full	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
title_fullStr	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
title_full_unstemmed	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
title_sort	improved ingan/gan light-emitting diodes with a p-gan/n-gan/p-gan/n-gan/p-gan current-spreading layer : errata
publishDate	2013
url	https://hdl.handle.net/10356/80001 http://hdl.handle.net/10220/13359
_version_	1681039687127400448

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata

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