Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata

• Main Authors: Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/80001; http://hdl.handle.net/10220/13359
• Institution: Nanyang Technological University

The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].