Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots

The electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots(QDs) are investigated using the 16-band k ⋅ pmodel with constant strain. The optical gain is calculated taking both homogeneous and inhomogeneous broadenings into consideration. The effective band gap falls...

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Main Authors: Song, Zhi-Gang, Bose, Sumanta, Fan, Wei-Jun, Li, Shu-Shen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
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Online Access:https://hdl.handle.net/10356/80309
http://hdl.handle.net/10220/40459
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-803092020-03-07T13:56:09Z Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots Song, Zhi-Gang Bose, Sumanta Fan, Wei-Jun Li, Shu-Shen School of Electrical and Electronic Engineering Centre for Micro-/Nano-electronics (NOVITAS) Photonics The electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots(QDs) are investigated using the 16-band k ⋅ pmodel with constant strain. The optical gain is calculated taking both homogeneous and inhomogeneous broadenings into consideration. The effective band gap falls as we increase the composition of nitrogen (N) and bismuth (Bi) and with an appropriate choice of composition we can tune the emission wavelength to span within 1.3 μm–1.55 μm, for device application in fiber technology. The extent of this red shift is more profound in QDs compared with bulk material due to quantum confinement. Other factors affecting the emission characteristics include virtual crystal, strain profile, band anticrossing (BAC), and valence band anticrossing (VBAC). The strain profile has a profound impact on the electronic structure, specially the valence band of QDs, which can be determined using the composition distribution of wave functions. All these factors eventually affect the optical gain spectrum. With an increase in QD size, we observe a red shift in the emission energy and emergence of secondary peaks owing to transitions or greater energy compared with the fundamental transition. MOE (Min. of Education, S’pore) Published version 2016-04-18T07:00:13Z 2019-12-06T13:46:57Z 2016-04-18T07:00:13Z 2019-12-06T13:46:57Z 2016 Journal Article Song, Z. G., Bose, S., Fan, W. J., & Li, S. S. (2016). Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots. Journal of Applied Physics, 119(14), 143103-. 0021-8979 https://hdl.handle.net/10356/80309 http://hdl.handle.net/10220/40459 10.1063/1.4945700 en Journal of Applied Physics © 2016 AIP Publishing LLC. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4945700]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Photonics
spellingShingle Photonics
Song, Zhi-Gang
Bose, Sumanta
Fan, Wei-Jun
Li, Shu-Shen
Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots
description The electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots(QDs) are investigated using the 16-band k ⋅ pmodel with constant strain. The optical gain is calculated taking both homogeneous and inhomogeneous broadenings into consideration. The effective band gap falls as we increase the composition of nitrogen (N) and bismuth (Bi) and with an appropriate choice of composition we can tune the emission wavelength to span within 1.3 μm–1.55 μm, for device application in fiber technology. The extent of this red shift is more profound in QDs compared with bulk material due to quantum confinement. Other factors affecting the emission characteristics include virtual crystal, strain profile, band anticrossing (BAC), and valence band anticrossing (VBAC). The strain profile has a profound impact on the electronic structure, specially the valence band of QDs, which can be determined using the composition distribution of wave functions. All these factors eventually affect the optical gain spectrum. With an increase in QD size, we observe a red shift in the emission energy and emergence of secondary peaks owing to transitions or greater energy compared with the fundamental transition.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Song, Zhi-Gang
Bose, Sumanta
Fan, Wei-Jun
Li, Shu-Shen
format Article
author Song, Zhi-Gang
Bose, Sumanta
Fan, Wei-Jun
Li, Shu-Shen
author_sort Song, Zhi-Gang
title Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots
title_short Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots
title_full Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots
title_fullStr Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots
title_full_unstemmed Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots
title_sort electronic band structure and optical gain of ganxbiyas1−x−y/gaas pyramidal quantum dots
publishDate 2016
url https://hdl.handle.net/10356/80309
http://hdl.handle.net/10220/40459
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