Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing

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Main Authors: Qiao, Zhongliang, Tang, Xiaohong, Li, Xiang, Bo, Baoxue, Gao, Xin, Qu, Yi, Liu, Chongyang, Wang, Hong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2017
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Online Access:https://hdl.handle.net/10356/80705
http://hdl.handle.net/10220/42443
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-807052020-09-26T22:18:52Z Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing Qiao, Zhongliang Tang, Xiaohong Li, Xiang Bo, Baoxue Gao, Xin Qu, Yi Liu, Chongyang Wang, Hong School of Electrical and Electronic Engineering Temasek Laboratories Semiconductor laser Quantum well intermixing (QWI) 6 p. InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method. The IFVD-QWI process was carried out by sputtering-depositing SiO2 mask layers on top of the complete InGaAs/GaAs/AlGaAs QW laser structure, emitting at 980 nm wavelength, and followed by a rapid thermal annealing at 880 °C for 60 s. The lasing wavelength of the devices fabricated from the intermixed wafer was blue-shifted with the increase of the mask layer thickness. The maximum emission wavelength blue shift of a processed as-cleaved laser reached 112 nm with the output-power more than 1000 mW. By using such an IFVD-QWI technique, multi-wavelength integrated LDs have also been successfully fabricated from a single chip. 2017-05-17T05:49:44Z 2019-12-06T13:55:05Z 2017-05-17T05:49:44Z 2019-12-06T13:55:05Z 2017 2017 Journal Article Qiao, Z., Tang, X., Li, X., Bo, B., Gao, X., Qu, Y., et al. (2017). Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing. IEEE Journal of the Electron Devices Society, 5(2), 122-127. 2168-6734 https://hdl.handle.net/10356/80705 http://hdl.handle.net/10220/42443 10.1109/JEDS.2017.2660531 196395 en IEEE Journal of the Electron Devices Society © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [https://doi.org/10.1109/JEDS.2017.2660531]. 6 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Semiconductor laser
Quantum well intermixing (QWI)
spellingShingle Semiconductor laser
Quantum well intermixing (QWI)
Qiao, Zhongliang
Tang, Xiaohong
Li, Xiang
Bo, Baoxue
Gao, Xin
Qu, Yi
Liu, Chongyang
Wang, Hong
Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing
description 6 p.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Qiao, Zhongliang
Tang, Xiaohong
Li, Xiang
Bo, Baoxue
Gao, Xin
Qu, Yi
Liu, Chongyang
Wang, Hong
format Article
author Qiao, Zhongliang
Tang, Xiaohong
Li, Xiang
Bo, Baoxue
Gao, Xin
Qu, Yi
Liu, Chongyang
Wang, Hong
author_sort Qiao, Zhongliang
title Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing
title_short Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing
title_full Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing
title_fullStr Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing
title_full_unstemmed Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing
title_sort monolithic fabrication of ingaas/gaas/algaas multiple wavelength quantum well laser diodes via impurity-free vacancy disorderingquantum well intermixing
publishDate 2017
url https://hdl.handle.net/10356/80705
http://hdl.handle.net/10220/42443
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