Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs

In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn0.5P heterojunction lattice matched to (001) GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles pseudopotential method with virtual crystal approximation. The valence band offset,...

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Main Authors:	Zhang, X. H., Chua, S. J., Fan, Weijun
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/80849 http://hdl.handle.net/10220/18010 http://dx.doi.org/10.1063/1.122096
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-808492019-12-06T14:15:49Z Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs Zhang, X. H. Chua, S. J. Fan, Weijun School of Electrical and Electronic Engineering Department of Electrical Engineering, Centre for Optoelectronics, National University of Singapore DRNTU::Engineering::Electrical and electronic engineering In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn0.5P heterojunction lattice matched to (001) GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles pseudopotential method with virtual crystal approximation. The valence band offset, VBO, varies with x as VBO=0.433x eV, while the inferred conduction band offset CBO at Γ minimum (band-gap difference minus the valence band offset) varies in x as CBOΓ=0.787x eV. Our results are in good agreement with the experimental data Published version 2013-12-04T03:34:42Z 2019-12-06T14:13:16Z 2013-12-04T03:34:42Z 2019-12-06T14:13:16Z 1998 1998 Journal Article Zhang, X. H., Chua, S. J., & Fan, W. (1998). Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs. Applied physics letters, 73(8), 1098. 0003-6951 https://hdl.handle.net/10356/80849 http://hdl.handle.net/10220/18010 http://dx.doi.org/10.1063/1.122096 en Applied physics letters © 1998 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.122096]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Zhang, X. H. Chua, S. J. Fan, Weijun Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
description	In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn0.5P heterojunction lattice matched to (001) GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles pseudopotential method with virtual crystal approximation. The valence band offset, VBO, varies with x as VBO=0.433x eV, while the inferred conduction band offset CBO at Γ minimum (band-gap difference minus the valence band offset) varies in x as CBOΓ=0.787x eV. Our results are in good agreement with the experimental data
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Zhang, X. H. Chua, S. J. Fan, Weijun
format	Article
author	Zhang, X. H. Chua, S. J. Fan, Weijun
author_sort	Zhang, X. H.
title	Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
title_short	Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
title_full	Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
title_fullStr	Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
title_full_unstemmed	Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
title_sort	band offsets at gainp/algainp(001) heterostructures lattice matched to gaas
publishDate	2013
url	https://hdl.handle.net/10356/80849 http://hdl.handle.net/10220/18010 http://dx.doi.org/10.1063/1.122096
_version_	1681048983143710720

Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs

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