Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn0.5P heterojunction lattice matched to (001) GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles pseudopotential method with virtual crystal approximation. The valence band offset,...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/80849 http://hdl.handle.net/10220/18010 http://dx.doi.org/10.1063/1.122096 |
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| Institution: | Nanyang Technological University |
| Language: | English |