Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs

• المؤلفون الرئيسيون: Zhang, X. H., Chua, S. J., Fan, Weijun
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/80849; http://hdl.handle.net/10220/18010; http://dx.doi.org/10.1063/1.122096
• المؤسسة: Nanyang Technological University

In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn0.5P heterojunction lattice matched to (001) GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles pseudopotential method with virtual crystal approximation. The valence band offset,...