Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency

• Main Authors: Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tan, Swee Tiam, Ji, Yun, Zhang, Xueliang, Wang, Liancheng, Kyaw, Zabu, Sun, Xiao Wei, Demir, Hilmi Volkan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: Light emitting diodes; Polarization; Conduction bands; Charge injection; Epitaxy
• Online Access: https://hdl.handle.net/10356/81214; http://hdl.handle.net/10220/39200
• Institution: Nanyang Technological University

InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN electron blocking layer (EBL) and makes the electron blocking effect relatively...