Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) h...

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Bibliographic Details
Main Authors: Fan, Zhen, Xiao, Juanxiu, Wang, Jingxian, Zhang, Lei, Deng, Jinyu, Liu, Ziyan, Dong, Zhili, Wang, John, Chen, Jingsheng
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2016
Subjects:
Polarization
Ferroelectric thin films
Online Access:https://hdl.handle.net/10356/81526
http://hdl.handle.net/10220/40856
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Institution: Nanyang Technological University
Language: English
Description
Summary:Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories.

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