A Monolithically Integrated Pressure/Oxygen/Temperature Sensing SoC for Multimodality Intracranial Neuromonitoring

• Main Authors: Chan, Wai Pan, Narducci, Margarita, Gao, Yuan, Cheng, Ming-Yuan, Cheong, Jia Hao, George, Arup K., Cheam, Daw Don, Leong, Siew Chong, Damalerio, Maria Ramona B., Lim, Ruiqi, Tsai, Ming-Ling, Rahman, Abdur R. A., Park, Mi Kyoung, Kong, Zhi Hui, Prashanth, Rao Jai, Je, Minkyu
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Capacitance to voltage converter (CVC); capacitive pressure sensor
• Online Access: https://hdl.handle.net/10356/81671; http://hdl.handle.net/10220/40917
• Institution: Nanyang Technological University

A fully integrated SoC for multimodality intracranial neuromonitoring is presented in this paper. Three sensors including a capacitive MEMS pressure sensor, an electrochemical oxygen sensor and a solid-state temperature sensor are integrated together in a single chip with their respective interface circuits. Chopper stabilization and dynamic element matching techniques are applied in sensor interface circuits to reduce circuit noise and offset. On-chip calibration is implemented for each sensor to compensate process variations. Measured sensitivity of the pressure, oxygen, and temperature sensors are 18.6 aF/mmHg, 194 pA/mmHg, and 2 mV/°C, respectively. Implemented in 0.18 m CMOS, the SoC occupies an area of 1.4 mm × 4 mm and consumes 166 μW DC power. A prototype catheter for intracranial pressure (ICP) monitoring has been implemented and the performance has been verified with ex vivo experiment.