High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure

• Main Authors: Meng, Qian Qian, Wang, Hong, Liu, Chong Yang, Ang, Kian Siong, Guo, Xin, Gao, Bo, Tian, Yang, Manoj Kumar, Chandra Mohan, Gao, Jianjun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Dipole-doped layer; high speed; photocurrent; uni-traveling-carrier photodiodes (UTC-PDs); 3-dB bandwidth
• Online Access: https://hdl.handle.net/10356/81730; http://hdl.handle.net/10220/39678
• Institution: Nanyang Technological University

InP-based unitraveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure to achieve high photocurrent as well as wide bandwidth are demonstrated in this letter. The dipole-doped layers in combination with a 22-nm-thick undoped InGaAs setback layer were employed at the InGaAs/InP absorp...