High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure

• Main Authors: Meng, Qian Qian, Wang, Hong, Liu, Chong Yang, Ang, Kian Siong, Guo, Xin, Gao, Bo, Tian, Yang, Manoj Kumar, Chandra Mohan, Gao, Jianjun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Dipole-doped layer; high speed; photocurrent; uni-traveling-carrier photodiodes (UTC-PDs); 3-dB bandwidth
• Online Access: https://hdl.handle.net/10356/81730; http://hdl.handle.net/10220/39678
• Institution: Nanyang Technological University

InP-based unitraveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure to achieve high photocurrent as well as wide bandwidth are demonstrated in this letter. The dipole-doped layers in combination with a 22-nm-thick undoped InGaAs setback layer were employed at the InGaAs/InP absorption and collection interface to reduce the current blocking effect. A high photocurrent of 160 mA with 1.9 GHz 3-dB bandwidth from a 70-(mu ) m-diameter top-illuminated UTC-PD is achieved. A large 3-dB bandwidth of 62.5 GHz, extracted using an equivalent circuit model, has also been obtained from a 12-(mu ) m-diameter UTC-PD device. The results demonstrate that the dipole-doping can serve as an effective alternative to the quaternary InGaAsP layer at InGaAs/InP interface for InP-based UTC-PD to suppress the current blocking and reduce the complexity in epilayers growth and device fabrication.