Surface third and fifth harmonic generation at crystalline Si for non-invasive inspection of Si wafer’s inter-layer defects

• Main Authors: Gao, Yi, Lee, Hyub, Jiao, Jiannan, Chun, Byung Jae, Kim, Seungchul, Kim, Dong-Hwan, Kim, Young-Jin
• Other Authors: School of Mechanical and Aerospace Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: DRNTU::Engineering::Mechanical engineering; Si Wafers; Crystalline Si
• Online Access: https://hdl.handle.net/10356/81896; http://hdl.handle.net/10220/47502
• Institution: Nanyang Technological University

Detection of inter-layer and internal defects in semiconductor silicon (Si) wafers by non-contact, non-destructive and depth-resolving techniques with a high lateral and depth resolution is one of the challenging tasks in modern semiconductor industry. In this paper, we report that nonlinear optical...