Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes

In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased QW number, a reduced electron leakage can be achieved and hence the efficienc...

Full description

Saved in:
Bibliographic Details
Main Authors: Zhang, Yi Ping, Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ju, Zhen Gang, Zhang, Xue Liang, Ji, Yun, Wang, Lian Cheng, Kyaw, Zabu, Hasanov, Namig, Zhu, Bin Bin, Lu, Shun Peng, Sun, Xiao Wei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2017
Subjects:
Online Access:https://hdl.handle.net/10356/81899
http://hdl.handle.net/10220/42287
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-81899
record_format dspace
spelling sg-ntu-dr.10356-818992020-03-07T12:31:25Z Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes Zhang, Yi Ping Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Ju, Zhen Gang Zhang, Xue Liang Ji, Yun Wang, Lian Cheng Kyaw, Zabu Hasanov, Namig Zhu, Bin Bin Lu, Shun Peng Sun, Xiao Wei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences Light-emitting diodes Quantum-well, -wire and -dot devices In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased QW number, a reduced electron leakage can be achieved and hence the efficiency droop can be reduced when a constant Shockley-Read-Hall (SRH) nonradiative recombination lifetime is used for all the samples. However, the experimental results indicate that, though the efficiency droop is suppressed, the LED optical power is first improved and then degraded with the increasing QW number. The analysis of the measured external quantum efficiency (EQE) with the increasing current revealed that an increasingly dominant SRH nonradiative recombination is induced with more epitaxial QWs, which can be related to the defect generation due to the strain relaxation, especially when the effective thickness exceeds the critical thickness. These observations were further supported by the carrier lifetime measurement using a pico-second time-resolved photoluminescence (TRPL) system, which allowed for a revised numerical modeling with the different SRH lifetimes considered. This work provides useful guidelines on choosing the critical QW number when designing LED structures. NRF (Natl Research Foundation, S’pore) 2017-04-19T05:18:06Z 2019-12-06T14:42:38Z 2017-04-19T05:18:06Z 2019-12-06T14:42:38Z 2015 2014 Journal Article Zhang, Y. P., Zhang, Z.-H., Liu, W., Tan, S. T., Ju, Z. G., Zhang, X. L., et al. Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes. Optics Express, 23(3), A34-A42. https://hdl.handle.net/10356/81899 http://hdl.handle.net/10220/42287 10.1364/OE.23.000A34 197824 en Optics Express © 2014 Optical Society of America
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Light-emitting diodes
Quantum-well, -wire and -dot devices
spellingShingle Light-emitting diodes
Quantum-well, -wire and -dot devices
Zhang, Yi Ping
Zhang, Zi-Hui
Liu, Wei
Tan, Swee Tiam
Ju, Zhen Gang
Zhang, Xue Liang
Ji, Yun
Wang, Lian Cheng
Kyaw, Zabu
Hasanov, Namig
Zhu, Bin Bin
Lu, Shun Peng
Sun, Xiao Wei
Demir, Hilmi Volkan
Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
description In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased QW number, a reduced electron leakage can be achieved and hence the efficiency droop can be reduced when a constant Shockley-Read-Hall (SRH) nonradiative recombination lifetime is used for all the samples. However, the experimental results indicate that, though the efficiency droop is suppressed, the LED optical power is first improved and then degraded with the increasing QW number. The analysis of the measured external quantum efficiency (EQE) with the increasing current revealed that an increasingly dominant SRH nonradiative recombination is induced with more epitaxial QWs, which can be related to the defect generation due to the strain relaxation, especially when the effective thickness exceeds the critical thickness. These observations were further supported by the carrier lifetime measurement using a pico-second time-resolved photoluminescence (TRPL) system, which allowed for a revised numerical modeling with the different SRH lifetimes considered. This work provides useful guidelines on choosing the critical QW number when designing LED structures.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhang, Yi Ping
Zhang, Zi-Hui
Liu, Wei
Tan, Swee Tiam
Ju, Zhen Gang
Zhang, Xue Liang
Ji, Yun
Wang, Lian Cheng
Kyaw, Zabu
Hasanov, Namig
Zhu, Bin Bin
Lu, Shun Peng
Sun, Xiao Wei
Demir, Hilmi Volkan
format Article
author Zhang, Yi Ping
Zhang, Zi-Hui
Liu, Wei
Tan, Swee Tiam
Ju, Zhen Gang
Zhang, Xue Liang
Ji, Yun
Wang, Lian Cheng
Kyaw, Zabu
Hasanov, Namig
Zhu, Bin Bin
Lu, Shun Peng
Sun, Xiao Wei
Demir, Hilmi Volkan
author_sort Zhang, Yi Ping
title Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
title_short Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
title_full Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
title_fullStr Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
title_full_unstemmed Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
title_sort nonradiative recombination — critical in choosing quantum well number for ingan/gan light-emitting diodes
publishDate 2017
url https://hdl.handle.net/10356/81899
http://hdl.handle.net/10220/42287
_version_ 1681047447995940864