Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes

• المؤلفون الرئيسيون: Zhang, Yi Ping, Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ju, Zhen Gang, Zhang, Xue Liang, Ji, Yun, Wang, Lian Cheng, Kyaw, Zabu, Hasanov, Namig, Zhu, Bin Bin, Lu, Shun Peng, Sun, Xiao Wei, Demir, Hilmi Volkan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: Light-emitting diodes; Quantum-well, -wire and -dot devices
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/81899; http://hdl.handle.net/10220/42287
• المؤسسة: Nanyang Technological University

In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased QW number, a reduced electron leakage can be achieved and hence the efficienc...