Gateable skyrmion transport via field-induced potential barrier modulation

Gateable skyrmion transport via field-induced potential barrier modulation

We report on the influence of pinning potentials on current-driven skyrmion dynamics and demonstrate that skyrmions can be gated via either magnetic or electric fields. When encountering pinning potentials, skyrmions are well known to simply skirt around them. However, we show that skyrmions can be...

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Bibliographic Details
Main Authors: Fook, Hiu Tung, Gan, Wei Liang, Lew, Wen Siang
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2018
Subjects:
DRNTU::Science::Physics
Magnetic Skyrmions
Computational nanotechnology
Online Access:https://hdl.handle.net/10356/82315
http://hdl.handle.net/10220/46631
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/82315
http://hdl.handle.net/10220/46631

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