Gateable skyrmion transport via field-induced potential barrier modulation
We report on the influence of pinning potentials on current-driven skyrmion dynamics and demonstrate that skyrmions can be gated via either magnetic or electric fields. When encountering pinning potentials, skyrmions are well known to simply skirt around them. However, we show that skyrmions can be...
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| Main Authors: | , , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
2018
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/82315 http://hdl.handle.net/10220/46631 |
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| 機構: | Nanyang Technological University |
| 語言: | English |