An Epitaxial Ferroelectric Tunnel Junction on Silicon

An Epitaxial Ferroelectric Tunnel Junction on Silicon

Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of int...

Full description

Saved in:
Bibliographic Details
Main Authors: Li, Zhipeng, Guo, Xiao, Lu, Hui-Bin, Zhang, Zaoli, Song, Dongsheng, Cheng, Shaobo, Bosman, Michel, Zhu, Jing, Dong, Zhili, Zhu, Weiguang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
Subjects:
Ferroelectric tunnel junction
Non-volatile memory
Tunneling electroresistance
Epitaxial growth
Pulsed laser deposition
Online Access:https://hdl.handle.net/10356/82373
http://hdl.handle.net/10220/39930
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.

Similar Items