An Epitaxial Ferroelectric Tunnel Junction on Silicon

• Main Authors: Li, Zhipeng, Guo, Xiao, Lu, Hui-Bin, Zhang, Zaoli, Song, Dongsheng, Cheng, Shaobo, Bosman, Michel, Zhu, Jing, Dong, Zhili, Zhu, Weiguang
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Ferroelectric tunnel junction; Non-volatile memory; Tunneling electroresistance; Epitaxial growth; Pulsed laser deposition
• Online Access: https://hdl.handle.net/10356/82373; http://hdl.handle.net/10220/39930
• Institution: Nanyang Technological University

Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.