An Epitaxial Ferroelectric Tunnel Junction on Silicon
Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of int...
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sg-ntu-dr.10356-823732020-06-01T10:13:31Z An Epitaxial Ferroelectric Tunnel Junction on Silicon Li, Zhipeng Guo, Xiao Lu, Hui-Bin Zhang, Zaoli Song, Dongsheng Cheng, Shaobo Bosman, Michel Zhu, Jing Dong, Zhili Zhu, Weiguang School of Electrical and Electronic Engineering School of Materials Science & Engineering Ferroelectric tunnel junction Non-volatile memory Tunneling electroresistance Epitaxial growth Pulsed laser deposition Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform. ASTAR (Agency for Sci., Tech. and Research, S’pore) 2016-02-03T03:08:40Z 2019-12-06T14:54:22Z 2016-02-03T03:08:40Z 2019-12-06T14:54:22Z 2014 Journal Article Li, Z., Guo, X., Lu, H. B., Zhang, Z., Song, D., Cheng, S., Bosman, M., Zhu, J., Dong, Z.,& Zhu, W. (2014). An Epitaxial Ferroelectric Tunnel Junction on Silicon. Advanced Materials, 26(42), 7185-7189. 0935-9648 https://hdl.handle.net/10356/82373 http://hdl.handle.net/10220/39930 10.1002/adma.201402527 en Advanced Materials © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| institution |
Nanyang Technological University |
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NTU Library |
| country |
Singapore |
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DR-NTU |
| language |
English |
| topic |
Ferroelectric tunnel junction Non-volatile memory Tunneling electroresistance Epitaxial growth Pulsed laser deposition |
| spellingShingle |
Ferroelectric tunnel junction Non-volatile memory Tunneling electroresistance Epitaxial growth Pulsed laser deposition Li, Zhipeng Guo, Xiao Lu, Hui-Bin Zhang, Zaoli Song, Dongsheng Cheng, Shaobo Bosman, Michel Zhu, Jing Dong, Zhili Zhu, Weiguang An Epitaxial Ferroelectric Tunnel Junction on Silicon |
| description |
Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Li, Zhipeng Guo, Xiao Lu, Hui-Bin Zhang, Zaoli Song, Dongsheng Cheng, Shaobo Bosman, Michel Zhu, Jing Dong, Zhili Zhu, Weiguang |
| format |
Article |
| author |
Li, Zhipeng Guo, Xiao Lu, Hui-Bin Zhang, Zaoli Song, Dongsheng Cheng, Shaobo Bosman, Michel Zhu, Jing Dong, Zhili Zhu, Weiguang |
| author_sort |
Li, Zhipeng |
| title |
An Epitaxial Ferroelectric Tunnel Junction on Silicon |
| title_short |
An Epitaxial Ferroelectric Tunnel Junction on Silicon |
| title_full |
An Epitaxial Ferroelectric Tunnel Junction on Silicon |
| title_fullStr |
An Epitaxial Ferroelectric Tunnel Junction on Silicon |
| title_full_unstemmed |
An Epitaxial Ferroelectric Tunnel Junction on Silicon |
| title_sort |
epitaxial ferroelectric tunnel junction on silicon |
| publishDate |
2016 |
| url |
https://hdl.handle.net/10356/82373 http://hdl.handle.net/10220/39930 |
| _version_ |
1681059307368480768 |